I-China RP yegraphite yomthengisi we-elektrode | Heyuan carbon

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I-China RP yegraphite yomthengisi we-elektrode | Heyuan carbon

I-RP ye-initerode ye-imeyile

Ububanzi:Φ75-125, ¶40-500, ¶350, ¶400-500, ¶550, ¶550-700

Ukuxhathisa okukhethekileyo:8.0-9.0 (≤, ω ω · m)

Amandla okubhala:6.5-10.0 (≥, Mpa)

I-Elastic Momber:9.0-9.3 (≤, GPA)

Unizi lolwapho kuyiwa khona:I-1.60-1.65 (≥, G / CM3)

I-CTE:2.9 (100 ℃ -60 ℃)

Nxibelelana ngoku Umthwalo we-PDF

Iinkcukacha

Ukucaciswa

Iipropathi zomzimba		Iyunithi	Ibanga le-RP (Di.300-600mm)	Ibanga le-HP (I-Dia.250-700mm)	Ibanga le-UHP (Di.300-700mm)
Ukuxhathisa kombane≤	I-electrode	μ ω-m	7.8-8.8	5.6-6.8	4.8-5.8
Ukuxhathisa kombane≤	Ingono	μ ω-m	5.6-6.5	3.4-4.5	3.0-3.8
Ukugoba amandla≥	I-electrode	Mpa	8.0-12.0	11.0-14.0	10.0-15.0
Ukugoba amandla≥	Ingono	Mpa	15.0-20.0	20.0-24.0	22.0-30.0
I-Elastic modyul≤	I-electrode	I-GPA	7.0-9.3	I-9.0-12.0	10.0-14.0
I-Elastic modyul≤	Ingono	I-GPA	12.0-14.0	12.0-18.0	14.0-20.0
Unizi lolwapho kuyiwa khona≥	I-electrode	g / cm3	1.53-1.56	1.72-1.75	1.70-1.74
Unizi lolwapho kuyiwa khona≥	Ingono	g / cm3	1.70-1.74	1.79-1.84	1.79-1.88
I-cte≤	I-electrode	× 10-6 / ° C	2.2-2.7	1.7-2.0	1.2-1.4
I-cte≤	Ingono	× 10-6 / ° C	2.0-2.5	1.4-1.8	1.0-12
I-ash≤	I-electrode	%	I-0.30	I-0.20	I-0.20
I-ash≤	Ingono	%	I-0.30	I-0.20	I-0.20

Izicelo

Isicelo se-RP-grakhi-i-elektroniki

Electrodes kwiziko lombane ze-ARC kunye ne-Ladle yokulungisa izinto zentsimbi;

Electrodes kwiziko lokunyibilikisa lombane lokuvelisa i-Silicon yeShishini, iPhosphorus ye-phosphorus, corundm njalo njalo.

Iipropati zenkqubo

Ukuqhutywa kombane okuhle.

Ukuxhathisa okuphezulu kwi-shrick ye-thermal.

Amandla aphezulu omatshini.

Inkqubo

qhuba i-rp-grakhi-electroni

Izixhobo

Ixabiso le-RP-igrakhi-electroni

Ukuhanjiswa

Ukuhanjiswa-i-RP-igraphrode-electroni

Bhala umyalezo apha kwaye uthumele kuthi

Shiya umyalezo wakho

iimveliso ezinxulumene noko

Shiya umyalezo wakho